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TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
5
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
Zero Temperature
4
3
2
1
-55 ° C
-25 ° C
0 ° C
50
Coefficient (ZTC)
125 ° C
- 25 ° C
0
70 ° C
125 ° C
0
V GS(TH) V GS(TH)
V GS(TH)
V GS(TH)
V GS(TH)
V GS(TH)
VGS(TH)-1
VGS(TH)
VGS(TH)+1 VGS(TH)+2 VGS(TH)+3 VGS(TH)+4
+0.0
+0.2
+0.4
+0.6
+0.8
+1.0
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
DRAIN-SOURCE ON CURRENT vs. ON RESISTANCE
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE SOURCE VOLTAGE vs. DRAIN
100000
V GS(TH) +4
D
SOURCE ON CURRENT
V DS
10000
VDS=+10V
T A = 25 ° C
VGS=-4.0V to +5.4V
V GS(TH) +3
V GS
I DS(ON)
V DS = 0.5V
T A = +125 ° C
1000
100
V GS(TH) +2
S
V DS = 0.5V
10
V GS(TH) +1
T A = +25 ° C
V DS = 5V
1
VDS=+0.1V
VDS=+5V
V GS(TH)
T A = +25 ° C
0.1
0.01
VDS=+1V
V GS(TH) -1
V DS = 5V
T A = +125 ° C
V DS = R ON ? I DS(ON)
0.1
1
10
100
1000
10000
0.1
1
10
100
1000
10000
5
ON RESISTANCE (K ? )
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
4
DRAIN SOURCE ON CURRENT ( μ A)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
4
TA = 25 ° C
3
REPRESENTATIVE UNITS
3
2
1
0
VDS = +10V
VDS = +5V
VDS = +1V
2
1
0
-1
-2
-3
-4
VGS(TH)
VGS(TH)+1 VGS(TH)+2 VGS(TH)+3 VGS(TH)+4 VGS(TH)+5
-50
-25
0
25
50
75
100
125
600
OUTPUT VOLTAGE (V)
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
VGS(TH)+4
AMBIENT TEMPERATURE ( ° C)
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
500
D
V DS
400
VGS(TH)+3
+125 ° C
V GS
I DS(ON)
300
200
I GSS
VGS(TH)+2
VGS(TH)+1
+25 ° C
S
0.0V ≤ V DS ≤ 5.0V
100
0
VGS(TH)
-50
-25
0
25
50
75
100
125
0.1
1
10
100
1000
10000
AMBIENT TEMPERATURE ( ° C)
ON - RESISTANCE (K ? )
ALD114813/ALD114913
Advanced Linear Devices
6 of 11
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